CMPT7410_15 datasheet(1/2 Pages) CENTRAL

Part #	CMPT7410

Description	SURFACE MOUNT PNP SILICON TRANSISTOR

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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CMPT7410

SURFACE MOUNT

LOW VCE(SAT)

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT7410 type

is a PNP Low VCE(SAT) silicon transistor manufactured

by the epitaxial planar process and epoxy molded in an

SOT-23 surface mount package. This device is designed

for battery driven, handheld devices requiring high

current and Low VCE(SAT).

MARKING CODE: C741

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

6.0

V

Continuous Collector Current

IC

1.0

A

Peak Collector Current

ICM

1.5

A

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=40V

100

nA

IEBO

VEB=6.0V

100

nA

BVCBO

IC=100μA

40

V

BVCEO

IC=10mA

25

V

BVEBO

IE=100μA

6.0

V

VCE(SAT)

IC=50mA, IB=5.0mA

30

50

mV

VCE(SAT)

IC=100mA, IB=10mA

50

75

mV

VCE(SAT)

IC=200mA, IB=20mA

95

150

mV

VCE(SAT)

IC=500mA, IB=50mA

205

250

mV

VCE(SAT)

IC=800mA, IB=80mA

320

400

mV

VCE(SAT)

IC=1.0A, IB=100mA

400

450

mV

VBE(SAT)

IC=800mA, IB=80mA

1.1

V

VBE(ON)

VCE=1.0V, IC=10mA

0.9

V

hFE

VCE=1.0V, IC=10mA

100

hFE

VCE=1.0V, IC=100mA

100

300

hFE

VCE=1.0V, IC=500mA

100

hFE

VCE=1.0V, IC=1.0A

50

fT

VCE=10V, IC=50mA, f=100MHz

100

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

10

15

pF

SOT-23 CASE

R2 (1-August 2011)

www.centra lsemi.com

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