STUD10L01 datasheet(1/8 Pages) SAMHOP

Part #	STUD10L01

Description	Super high dense cell design for low RDS(ON).

PDF	8 Pages

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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1 / 8 page

S mHop Microelectronics C orp.

a

STU/D10L01

Symbol

VDS

VGS

IDM

A

ID

Units

Parameter

100

V

±20

Gate-Source Voltage

Drain-Source Voltage

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

100V

10A

213 @ VGS=10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

TO-252 and TO-251 Package.

N-Channel Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

-Pulsed

b

A

Ver 1.1

www.samhop.com.tw

Dec,19,2011

1

Details are subject to change without notice.

TC=25°C

G

S

D

G

S

STU SERIES

TO - 252AA( D- PAK )

STD SERIES

TO - 251( I - PAK )

W

PD

°C

-55 to 150

TC=25°C

THERMAL CHARACTERISTICS

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

50

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

2.5

°C/W

Thermal Resistance, Junction-to-Case

R JC

TC=70°C

A

EAS

mJ

Single Pulse Avalanche Energy

d

TC=70°C

W

a

11

10

29

50

Gre

rr

P

Pr

P

P o

rr

8

32

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STUD10L01 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

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