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STUD303S Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # STUD303S
Description  S uper high dense cell design for low R DS (ON).
PDF  8 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD303S Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BVDSS
=
VGS 0V, ID -250uA
=
-30
V
Zero Gate Voltage Drain Current
IDSS
VDS -20V, VGS 0V
==
-1
Gate-Body Leakage
IGSS
VGS
20V, VDS 0V
=
=
10
ON CHAR ACTE R IS TICS
a
Gate Threshold Voltage
VGS(th)
VDS VGS,ID = -250uA
=
-1
-3
V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS -10V, ID -12A
VGS -4.5V, ID -6A
On-S tate Drain Current
ID(ON)
VDS =-10V, VGS =-10V
A
S
Forward Transconductance
FS
g
VDS -10V, ID -10A
DYNAMIC CHAR ACTE R IS TICS
b
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =-15V, VGS =0V
f =1.0MHZ
P
F
P
F
P
F
C
=
=
=
=
==
5
uA
mohm
mohm
-30
170
270
1130
11.5
S TU/D303S
E LE C TR IC AL C HAR AC TE R IS TIC S (TC=25 C unless otherwise noted)
S WITCHING CHAR ACTE R IS TICS
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD =-15V
ID =-1 A
VGS = -10V
R GEN =6 ohm
ns
ns
ns
ns
Total GateCharge(10V)
Gate-S ource Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =-15V, ID =-12A
VGS =-10V
nC
nC
nC
Fall Time
2
nC
22
28
100
31
19
6.4
2.7
10.6
Total GateCharge(4.5V)
28
40
uA
-1.8
34
23



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