25.04.2012

LED660N-66-60

1 of 3

LED660N-66-60

TECHNICAL DATA

High Power LED Array, 60 chips

AlGaInP

LED660N-66-60 is a wide viewing and extremely high output power illuminator assembled with a

total of 60 high efficiency AlGaInP diode chips, mounted on a metal stem TO-66 with AIN ceramics

and covered with double coated clear silicone and epoxy resin.

These devices are designed for high current operation with proper heat sinking to improver thermal

conductive efficiency.

Specifications

(Unit: mm)

•

Structure:

AlGaInP, 60 LED chips

•

Peak Wavelength:

660 nm

•

Optical Output Power:

2.4 W

•

Package:

TO-66 stem with AIN

•

Lens:

clear silicone and/or epoxy resin

Item

Symbol

Value

Unit

Power Dissipation

16.8

W

Forward Current

1.2

A

Reverse Voltage

50

V

Junction Temperature

100

°C

Thermal Resistance *

1

2

K/W

Operating Temperature

-30 … +80

°C

Storage Temperature

-30 … +110

°C

Soldering Temperature *

2

240

°C

*

*

Electro-Optical Characteristics

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Peak Wavelength

λ

P

-

660

-

nm

Half Width

Δλ

-

16

-

nm

Total Radiated Power

-

1.2

-

W

-

2.4

-

Radiant Intensity

-

270

-

mW/sr

-

540

-

Brightness

-

31.4

-

cd

-

62.8

-

Forward Voltage

-

11.2

-

V

-

12.0

-

Reverse Voltage

50

-

-

V

Viewing Half Angle

Θ

1/2

-

±60

-

deg.

Heat Sink is required

, to keep the LED at ≤60 °C.

Note: The above specifications are for reference purpose only and subjected to change without prior notice.