07.04.2011

LED1050-66-60

1 of 1

LED1050-66-60

TECHNICAL DATA

High Power LED Array, 60 chips

GaAs

LED1050-66-60 is a wide viewing and extremely high output power illuminator assembled with a

total of 60 high efficiency GaAs diode chips, mounted on a metal stem TO-66 with AIN ceramics

and covered with double coated clear silicone and epoxy resin.

These devices are designed for high current operation with proper heat sinking to improver thermal

conductive efficiency.

Specifications

• Structure: GaAs, 60 LED chips

• Peak Wavelength: typ. 1050 nm

• Optical Output Power: typ. 120 mW

• Package: TO-66 stem with AIN,

clear silicone and epoxy resin

Item

Symbol

Value

Unit

Power Dissipation

6.0

W

Forward Current

800

mA

Reverse Voltage

30

V

Operating Temperature

-30 … +80

°C

Storage Temperature

-30 … +110

°C

Soldering Temperature *

265

°C

(Unit: mm)

Electro-Optical Characteristics

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Total Radiated Power

-

120

-

mW

Forward Voltage

-

7.0

-

V

Reverse Voltage

30

-

-

V

Peak Wavelength

λ

P

1000

1050

1100

nm

Half Width

Δλ

-

55

-

nm

Viewing Half Angle

Θ

1/2

-

±60

-

deg.

Rise Time

-

15

-

ns

Fall Time

-

10

-

ns

Heat Sink is required, thermal resistance <8K/W

Notes

• This high power LED must be cooled!

• Do not view directly into the emitting area of the LED during operation!

• The above specifications are for reference purpose only and subjected to change without prior notice.