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LEDW47-66-60 Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LEDW47-66-60 Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 2 page ![]() 25.04.2012 LEDW47-66-60 1 of 2 LEDW47-66-60 TECHNICAL DATA High Power LED Array, 60 chips InGaN LEDW47-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency InGaN blue color diode chips, mounted on a metal stem TO-66 and covered with silicone resin. These devices are designed for high current operation with proper heat sinking to improver thermal conductive efficiency. Specifications (Unit: mm) • Structure: InGaN, 60 LED chips • Peak Wavelength: white color • Optical Output Power: 60 mW • Package: TO-66 stem • Lens: silicone resin Absolute Maximum Ratings (TA=25°C) Item Symbol Value Unit Power Dissipation PD 8.5 W Forward Current IF 400 mA Pulse Forward Current * 1 IFP 2000 mA Reverse Voltage VR 30 V Operating Temperature Topr -30 … +80 °C Storage Temperature Tstg -30 … +110 °C Soldering Temperature * 2 Tsol 240 °C * 1 duty = 1%, pulse width = 1 µs * 2 must be completed within 3 seconds at 260°C Electro-Optical Characteristics Item Symbol Condition Min. Typ. Max. Unit Peak Wavelength λ P IF = 240 mA * nm Half Width Δλ IF = 240 mA - - - nm Total Radiated Power PO IF = 240 mA - 60 - mW Radiant Intensity IE IF = 240 mA - 35 - mW/sr Brightness IV IF = 240 mA - 13 - cd Forward Voltage VF IF = 240 mA - 19.0 - V Reverse Voltage VR IR = 10 µA 50 - - V Viewing Half Angle Θ 1/2 IF = 240 mA - ±55 - deg. * x: 2.3±0.3E-01, y: 2.2±0.3E-01 Heat Sink is required , to keep the LED at ≤60 °C. Note: The above specifications are for reference purpose only and subjected to change without prior notice. |
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