15.11.2010

PT511-2

1 of 1

PT511-2

TECHNICAL DATA

TO-Can PIN Photodiode

PT511-2 is an InGaAs pin structure based photodiode on InP by MOCVD method and planar

diffusing technology. The sensitive area is Ø 300µm respectively. TO-46 package with flat glass

lens.

Absolute Maximum Ratings

Item

Symbol

Value

Unit

Reverse Voltage

30

V

Reverse current

1000

µA

Forward current

5

mA

Power Dissipation

100

mW

Operating Temperature

-40 … +85

°C

Storage Temperature

-40 … +125

°C

Soldering Temperature *

260

°C

Specifications

Item

Value

Unit

Wavelength Range

850 .. 1650

nm

Sensitive Area

Ø 300

µm

Unsaturated Power

10

dBm

Responsivity

λ=1300 nm

0.85

A/W

Capacitance (-5 V)

2

pF

Dark Current (-5 V)

≤1

nA

Rise/Fall time

3

ns

Saturation Power

>10

dB

Drawing (mm)

Bottom View