2

1

3

BV

R

I

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 5.5 nC (Typ.)

Extended Safe Operating Area

Lower R

100% Avalanche Tested

FEATURES

HFS2N65U

650V N-Channel MOSFET

1.Gate 2. Drain 3. Source

TO-220F

Absolute Maximum Ratings

T

unless otherwise specified

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

650

V

I

D

Drain Current

– Continuous (T

)

2.0 *

A

Drain Current

– Continuous (T

)

1.3 *

A

I

DM

Drain Current

– Pulsed

(Note 1)

8.0 *

A

V

GS

Gate-Source Voltage

30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

116

mJ

I

AR

Avalanche Current

(Note 1)

2.0

A

E

AR

Repetitive Avalanche Energy

(Note 1)

2.3

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

P

D

Power Dissipation (T

)

- Derate above 25

23

W

0.18

W/

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

5.5

/W

R

JA

Junction-to-Ambient

--

62.5

* Drain current limited by maximum junction temperature

Nov 2013