CMPT930_15 datasheet(1/2 Pages) CENTRAL

Part #	CMPT930

Description	SURFACE MOUNT NPN SILICON TRANSISTOR

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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CMPT930

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT930 type is

an NPN silicon transistor manufactured by the epitaxial

planar process, epoxy molded in a surface mount

package, designed for small signal general purpose

and switching applications.

MARKING CODE: C1X

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

45

V

Collector-Emitter Voltage

VCEO

45

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

30

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=45V

10

nA

ICEO

VCE=5.0V

10

nA

ICES

VCE=45V

10

nA

IEBO

VEB=5.0V

10

nA

BVCBO

IC=10μA

45

V

BVCEO

IC=10mA

45

V

BVEBO

IE=10μA

5.0

V

VCE(SAT)

IC=10mA, IB=0.5mA

1.0

V

VBE(SAT)

IC=10mA, IB=0.5mA

0.6

1.0

V

hFE

VCE=5.0V, IC=10μA

100

300

hFE

VCE=5.0V, IC=500μA

150

hFE

VCE=5.0V, IC=10mA

600

fT

VCE=5.0V, IC=500mA, f=30MHz

30

MHz

Cob

VCB=5.0V, IE=0, f=1.0MHz

8.0

pF

NF

VCE=5.0V, IC=10mA, RS=10kΩ,

f=10Hz to 15.7kHz

3.0

dB

SOT-23 CASE

R5 (27-January 2010)

www.centra lsemi.com

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