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LT3753 Datasheet(PDF) 21 Page - Linear Technology |
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LT3753 Datasheet(HTML) 21 Page - Linear Technology |
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21 / 36 page ![]() LT3753 21 3753f For more information www.linear.com/LT3753 applicaTions inForMaTion As shown in Figure 12, the maximum steady-state value for VCCL may occur at minimum or maximum input volt- age. Hence VCCLshouldbecalculatedatbothinputvoltage levels and the largest of the two calculations used. M1 drain should be rated for a voltage greater than the above steady-state VDS calculation due to tolerances in duty cycle, load transients, voltage ripple on CCL and leakage inductance spikes. CCL should be rated higher due to the effect of voltage coefficient on capacitance value. A typical choice for CCL is a good quality X7R capacitor. M2 should have a VDS rating greater than VCCL since the bottom plate of CCL is –VCCL during M1 on and M2 off. For high input voltage applications, the limited VDS rating of available P-channel MOSFETs might require changing from a LO side to HI side active clamp topology. Forthelosideactiveclamptopologyinsteadystate,during M1 on time, magnetizing current (IMAG) increases from a negative value to a positive value (Figure 11). When M1 turnsoff,magnetizingcurrentchargesSWPuntilitreaches VCCL plus the voltage drop of the M2 body diode. At this Figure 12. LO Side VCCL vs Duty Cycle (Normalized to 50% Duty Cycle) Figure 11. Active Clamp Reset: Magnetizing Current and M1 Drain Voltage 20µs/DIV IMAG 1A/DIV SWP 50V/DIV 3753 F11 DUTY CYCLE (%) 20 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 50 70 3753 F12 30 40 60 80 LO SIDE ACTIVE CLAMP TOPOLOGY Figure 13. HI Side VCCL vs Duty Cycle (Normalized to 50% Duty Cycle) Figure 14. HI Side Active Clamp Topology (Using LT3752-1) DUTY CYCLE (%) 20 1.5 3753 F13 1.0 0.5 40 60 30 50 70 2.0 2.5 1.3 0.8 1.8 2.3 80 HI SIDE ACTIVE CLAMP TOPOLOGY CCL LLEAK LLEAK SWP LMAG FSW CSW • • • • VD D1 –VIN C2 T4 C1 M2 M4 M1 M3 R1 OUT VIN –VIN VOUT –VOUT AOUT LT3752-1 FG LTXXXX CG 3753 F14 |
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