(Continued)

R0

NPN

PNP

MPS6512

MPS6516

MPS6513

MPS6517

MPS6514

MPS6518

MPS6515

MPS6519

COMPLEMENTARY

SILICON TRANSISTORS

JEDEC TO-92 CASE

DATA SHEET

DESCRIPTION

The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon

Small Signal Transistors designed for general-purpose amplifier applications.

MAXIMUM RATINGS (TA=25°C unless otherwise noted)

MPS6516

MPS6512

MPS6514

MPS6517

SYMBOL

MPS6513

MPS6515

MPS6518

MPS6519

UNITS

Collector-Base Voltage

VCBO

40

40

40

25

V

Collector-Emitter Voltage

VCEO

30

25

40

25

V

Emitter-Base Voltage

VEBO

4.0

V

Collector Current

IC

100

mA

Power Dissipation

PD

625

mW

Power Dissipation (TC=25°C) PD

1.5

W

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

83.3

°C/W

Thermal Resistance

ΘJA

200

°C/W

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

MPS6516

MPS6512

MPS6514

MPS6517

MPS6513

MPS6515

MPS6518

MPS6519

SYMBOL

TEST CONDITIONS

MIN MAX

MIN MAX

MIN MAX

MIN MAX

UNITS

ICBO

VCB=30V

50

50

50

-

nA

ICBO

VCB=20V

-

-

-

50

nA

BVCEO

IC=0.5mA

30

25

40

25

V

BVEBO

IE=10µA

4.0

4.0

4.0

4.0

V

VCE(SAT)

IC=50mA, IB=5.0mA

0.5

0.5

0.5

0.5

V

Cob

VCB=10V, IE=0, f=100kHz

3.5

3.5

4.0

4.0

pF

MPS6512

MPS6513

MPS6514

MPS6515

MPS6516

MPS6517

MPS6518

MPS6519

SYMBOL

TEST CONDITIONS

MIN MAX

MIN MAX

MIN MAX

MIN MAX

hFE

VCE=10V, IC=2.0mA

50

100

90

180

150 300

250

500

hFE

VCE=10V, IC=100mA

30

60

90

150