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LTC3586/LTC3586-1

3586fb

Ideal Diode V-I Characteristics

Ideal Diode Resistance

vs Battery Voltage

Output Voltage vs Output Current

(Battery Charger Disabled)

elecTrical characTerisTics The

denotes the specifications which apply over the full operating

temperature range, otherwise specifications are at TA = 25°C. VBUS = 5V, BAT = 3.8V, VIN1 = VIN2 = VIN3 = VIN4 = VOUT3 = 3.8V,

VOUT4 = 5V, RPROG = 1k, RCLPROG = 3.01k, unless otherwise noted.

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

RDS(ON)P4

PMOS RDS(ON)

Synchronous Switch

0.25

RDS(ON)N4

NMOS RDS(ON)

Main Switch

0.17

ILEAK(P)4

PMOS Switch Leakage

Synchronous Switch

–1

µA

ILEAK(N)4

NMOS Switch Leakage

Main Switch

–1

µA

RVOUT4

VOUT4 Pull-Down in Shutdown

kΩ

DBOOST(MAX)

Maximum Boost Duty Cycle

tSS4

Soft-Start Time

0.375

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: The LTC3586E/LTC3586E-1 are guaranteed to meet performance

speciﬁcations from 0°C to 85°C. Speciﬁcations over the –40°C to 85°C

operating temperature range are assured by design, characterization and

correlation with statistical process controls.

Note 3: The LTC3586E/LTC3586E-1 include overtemperature protection

that is intended to protect the device during momentary overload

conditions. Junction temperature will exceed 125°C when overtemperature

protection is active. Continuous operation above the speciﬁed maximum

operating junction temperature may impair device reliability.

Note 4: Total input current is the sum of quiescent current, IVBUSQ, and

measured current given by:

VCLPROG/RCLPROG • (hCLPROG +1)

Note 5: The current limit features of this part are intended to protect the

IC from short term or intermittent fault conditions. Continuous operation

above the maximum speciﬁed pin current rating may result in device

degradation or failure.

Note 6: hC/10 is expressed as a fraction of measured full charge current

with indicated PROG resistor.

Note 7: FBx above regulation such that regulator is in sleep. Speciﬁcation

does not include resistive divider current reflected back to VINX.

Note 8: Guaranteed by design.

FORWARD VOLTAGE (V)

0.6

0.8

1.0

0.16

3586 G01

0.4

0.2

0.04

0.08

0.12

0.20

INTERNAL IDEAL DIODE

WITH SUPPLEMENTAL

EXTERNAL VISHAY

Si2333 PMOS

INTERNAL IDEAL

DIODE ONLY

VBUS = 0V

VBUS = 5V

BATTERY VOLTAGE (V)

2.7

0.15

0.20

0.25

3.9

3586 G02

0.10

0.05

3.0

3.3

3.6

4.2

INTERNAL IDEAL DIODE

WITH SUPPLEMENTAL

EXTERNAL VISHAY

Si2333 PMOS

INTERNAL IDEAL DIODE

OUTPUT CURRENT (mA)

4.00

4.25

4.50

800

3586 G03

3.75

3.50

3.25

200

400

600

1000

BAT = 4V

BAT = 3.4V

VBUS = 5V

5x MODE

Typical perForMance characTerisTic (T

A = 25°C unless otherwise noted)

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