 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
DMN601DMK Datasheet(PDF) 2 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
DMN601DMK Datasheet(HTML) 2 Page - Diodes Incorporated |
|
|
2 / 5 page  DMN601DMK Document number: DS30657 Rev. 5 - 2 2 of 5 www.diodes.com November 2011 © Diodes Incorporated DMN601DMK Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = 25°C TA = 70°C ID 510 400 mA t<10s TA = 25°C TA = 70°C ID 580 470 mA Continuous Drain Current (Note 5) VGS = 4V Steady State TA = 25°C TA = 70°C ID 390 300 mA t<10s TA = 25°C TA = 70°C ID 440 340 mA Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 850 mA Maximum Body Diode Continuous Current IS 1.2 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 4) PD 0.7 W Thermal Resistance, Junction to Ambient (Note 4) Steady state RθJA 157 °C/W t<10s 121 Total Power Dissipation (Note 5) PD 0.98 W Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 113 °C/W t<10s 88 Thermal Resistance, Junction to Case (Note 5) RθJC 26 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±10 μA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) 1.0 1.6 2.5 V VDS = 10V, ID = 1mA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ ⎯ 2.4 4.0 Ω VGS = 10V, ID = 200mA VGS = 4V, ID = 200mA Forward Transfer Admittance |Yfs| 100 ⎯ ⎯ ms VDS =10V, ID = 200mA Diode Forward Voltage VSD 0.5 ⎯ 1.4 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss ⎯ 30 50 pF VDS = 25V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 5 25 pF Reverse Transfer Capacitance Crss ⎯ 3 5.0 pF Gate Resistance Rg ⎯ 133 ⎯ Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg ⎯ 304 ⎯ nC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-Source Charge Qgs ⎯ 84 ⎯ Gate-Drain Charge Qgd ⎯ 203 ⎯ Turn-On Delay Time tD(on) ⎯ 3.9 ⎯ ns VDS = 30V, ID = 0.2A, VGS = 10V, RG = 25Ω, RL = 150Ω Turn-On Rise Time tr ⎯ 3.4 ⎯ Turn-Off Delay Time tD(off) ⎯ 15.7 ⎯ Turn-Off Fall Time tf ⎯ 9.9 ⎯ Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 6. Short duration pulse test used to minimize self-heating effect 7. Guaranteed by design. Not subject to production testing |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
