TIP35

TIP35A TIP35B TIP35C

MAXIMUM RATINGS: (TC=25°C)

SYMBOL TIP36

TIP36A TIP36B TIP36C

UNITS

Collector-Base Voltage

VCBO

40

60

80

100

V

Collector-Emitter Voltage

VCEO

40

60

80

100

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

25

A

Peak Collector Current

ICM

40

A

Continuous Base Current

IB

5.0

A

Power Dissipation

PD

125

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

1.0

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICEO

VCE=30V (TIP35, TIP35A, TIP36, TIP36A)

1.0

mA

ICEO

VCE=60V (TIP35B, TIP35C, TIP36B, TIP36C)

1.0

mA

ICES

VCE=Rated VCEO

0.7

mA

IEBO

VEB=5.0V

1.0

mA

BVCEO

IC=30mA (TIP35, TIP36)

40

V

BVCEO

IC=30mA (TIP35A, TIP36A)

60

V

BVCEO

IC=30mA (TIP35B, TIP36B)

80

V

BVCEO

IC=30mA (TIP35C, TIP36C)

100

V

VCE(SAT)

IC=15A, IB=1.5A

1.8

V

VCE(SAT)

IC=25A, IB=5.0A

4.0

V

VBE(ON)

VCE=4.0V, IC=15A

2.0

V

VBE(ON)

VCE=4.0V, IC=25A

4.5

V

hFE

VCE=4.0V, IC=1.5A

25

hFE

VCE=4.0V, IC=15A

10

100

hfe

VCE=10V, IC=1.0A, f=1.0kHz

25

fT

VCE=10V, IC=1.0A, f=1.0MHz

3.0

MHz

TIP35 TIP35A TIP35B TIP35C

NPN

TIP36 TIP36A TIP36B TIP36C

PNP

COMPLEMENTARY

SILICON POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR TIP35 and TIP36

series devices are complementary silicon power

transistors manufactured by the epitaxial base process,

designed for high current amplifier and switching

applications.

MARKING: FULL PART NUMBER

TO-218 TRANSISTOR CASE

R2 (18-July 2013)

www.centr a lsemi.com