CSDD-8B datasheet(1/2 Pages) CENTRAL

Part #	CSDD-8B

Description	SURFACE MOUNT SILICON CONTROLLED RECTIFIER

PDF	2 Pages

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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CSDD-8M

CSDD-8N

SURFACE MOUNT

SILICON CONTROLLED RECTIFIER

8 AMP, 600 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CSDD-8M series

type is an Epoxy Molded Silicon Controlled Rectifier

designed for sensing circuit applications and control

systems.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

CSDD-8M

CSDD-8N

UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM

600

800

V

RMS On-State Current (TC=90°C)

IT(RMS)

8.0

A

Peak One Cycle Surge, t=10ms

ITSM

70

A

I2t Value for Fusing, t=10ms

I2t

24

A2s

Peak Gate Power, tp=10μs

PGM

40

W

Average Gate Power Dissipation

PG(AV)

1.0

W

Peak Forward Gate Current, tp=10μs

IFGM

4.0

A

Peak Forward Gate Voltage, tp=10μs

VFGM

16

V

Peak Reverse Gate Voltage, tp=10μs

VRGM

5.0

V

Critical Rate of Rise of On-State Current

di/dt

50

A/μs

Operating Junction Temperature

TJ

-40 to +125

°C

Storage Temperature

Tstg

-40 to +150

°C

Thermal Resistance

ΘJA

60

°C/W

Thermal Resistance

ΘJC

2.5

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM, IRRM

Rated VDRM, VRRM

10

μA

IDRM, IRRM

Rated VDRM, VRRM, TC=125°C

2.0

mA

IGT

VD=12V, RL=10Ω

3.0

15

mA

IH

IT=100mA

7.3

20

mA

VGT

VD=12V, RL=10Ω

0.9

1.5

V

VTM

ITM=16A, tp=380μs

1.3

1.8

V

dv/dt

VD=2/3 VDRM, TC=125°C

200

V/μs

D2PAK CASE

R2 (17-February 2010)

www.centra lsemi.com

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CSDD-8B Datasheet(PDF) 1 Page - Central Semiconductor Corp

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