LTC3350_15 datasheet(7/46 Pages) LINER

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LTC3350

3350fb

For more information www.linear.com/LTC3350

elecTrical characTerisTics The

denotes the specifications which apply over the specified operating

junction temperature range, otherwise specifications are at TA = 25°C (Note 2). VIN = VOUT = 12V, VDRVCC = VINTVCC unless otherwise

noted.

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

tSU,STO

Stop Condition Set-Up Time

0.6

µs

tHD,DATO

Output Data Hold Time

900

tHD,DATI

Input Data Hold Time

tSU,DAT

Data Set-Up Time

100

tSP

Input Spike Suppression Pulse Width

VSMBALERT

SMBALERT Output Low Voltage

ISINK = 1mA

200

ISMBALERT

SMBALERT High-Z Leakage Current

VSMBALERT = 5V

μA

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: The LTC3350 is tested under pulsed load conditions such that

TJ ≈ TA. The LTC3350E is guaranteed to meet specifications from

0°C to 125°C junction temperature. Specifications over the –40°C to

125°C operating junction temperature range are assured by design,

characterization and correlation with statistical process controls. The

LTC3350I is guaranteed over the –40°C to 125°C operating junction

temperature range. Note that the maximum ambient temperature

consistent with these specifications is determined by specific operating

conditions in conjunction with board layout, the rated package thermal

impedance and other environmental factors. The junction temperature

(TJ, in °C) is calculated from the ambient temperature (TA, in °C) and

power dissipation (PD, in Watts) according to the formula:

TJ = TA + (PD • θJA)

where

θJA = 34°C/W for the UHF package.

Note 3: The LTC3350 includes overtemperature protection that is intended

to protect the device during momentary overload conditions. Junction

temperature will exceed 125˚C when overtemperature protection is active.

Continuous operation above the specified maximum operating junction

temperature may impair device reliability.

Note 4: Dynamic supply current is higher due to the gate charge being

delivered at the switching frequency. See the Applications Information

section.

Note 5: Measurement error is the magnitude of the difference between the

actual measured value and the ideal value. VSNSI is the voltage between

VOUTSP and VOUTSN, representing input current. VSNSC is the voltage

between ICAP and VCAP, representing charge current. Error for VSNSI and

VSNSC is expressed in μV, a conversion to an equivalent current may be

made by dividing by the sense resistors, RSNSI and RSNSC, respectively.

Typical perForMance characTerisTics

Supercapacitor Backup Operation

HV Electrolytic Backup Operation

Shunt Operation Using VCAP2

VIN

2V/DIV

VCAP

2V/DIV

VOUT

2V/DIV

400ms/DIV

BACK PAGE APPLICATION CIRCUIT

3350 G01

PBACKUP = 25W

VIN

5V/DIV

VCAP

5V/DIV

VOUT

5V/DIV

20ms/DIV

APPLICATION CIRCUIT 6

3350 G02

PBACKUP = 25W

VCAP2 (V)

2.64

2.67

2.69

3350 G03

2.65 2.66

2.68

ICAP2

2.70 2.71

–1

ICHARGE

VSHUNT = 2.7V

TA = 25°C, Application Circuit 4 unless otherwise noted.

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