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IRF1018ESLPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF1018ESLPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRF1018E/S/SLPbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.08mH RG = 25Ω, IAS = 47A, VGS =10V. Part not recommended for use above this value. ISD ≤ 47A, di/dt ≤ 1668A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400μs; duty cycle ≤ 2%. S D G
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. This is only applied to TO-220 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.073 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 7.1 8.4 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 110 ––– ––– S Qg Total Gate Charge ––– 46 69 nC Qgs Gate-to-Source Charge ––– 10 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 12 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 34 ––– RG(int) Internal Gate Resistance ––– 0.73 ––– Ω td(on) Turn-On Delay Time ––– 13 ––– ns tr Rise Time ––– 35 ––– td(off) Turn-Off Delay Time ––– 55 ––– tf Fall Time ––– 46 ––– Ciss Input Capacitance ––– 2290 ––– Coss Output Capacitance ––– 270 ––– Crss Reverse Transfer Capacitance ––– 130 ––– pF Coss eff. (ER) Effective Output Capacitance (Energy Related)h ––– 390 ––– Coss eff. (TR) Effective Output Capacitance (Time Related)g ––– 630 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 79 A (Body Diode) ISM Pulsed Source Current ––– ––– 315 (Body Diode) c VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 26 39 ns TJ = 25°C VR = 51V, ––– 31 47 TJ = 125°C IF = 47A Qrr Reverse Recovery Charge ––– 24 36 nC TJ = 25°C di/dt = 100A/μs f ––– 35 53 TJ = 125°C IRRM Reverse Recovery Current ––– 1.8 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions VDS = 50V, ID = 47A ID = 47A VGS = 20V VGS = -20V MOSFET symbol showing the VDS = 30V Conditions VGS = 10V f VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V h VGS = 0V, VDS = 0V to 60V g TJ = 25°C, IS = 47A, VGS = 0V f integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 5mA c VGS = 10V, ID = 47A f VDS = VGS, ID = 100μA VDS = 60V, VGS = 0V VDS = 48V, VGS = 0V, TJ = 125°C ID = 47A RG = 10Ω VGS = 10V f VDD = 39V ID = 47A, VDS =0V, VGS = 10V |
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