RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS130906

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RF MICRO DEVICES

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RF3932D

60W GaN on SiC Power Amplifier Die

The RF3932D is a 48V, 60W, GaN on SiC high power discrete

amplifier die designed for commercial wireless infrastructure, cellular

and WiMAX infrastructure, industrial/scientific/medical and general

purpose broadband amplifier applications. Using an advanced high

power density Gallium Nitride (GaN) semiconductor process, the

RF3932D is able to achieve high efficiency and flat gain over a broad

frequency range in a single amplifier design with proper packaging and

assembly. The RF3932D is an unmatched 0.5

m gate, GaN transistor

die suitable for many applications with > 49dBm saturated power,

> 70% saturated drain efficiency, and > 14dB small signal gain at

2GHz.

Functional Block Diagram

Ordering Information

RF3932D

60W GaN on SiC Power Amplifier Die

Package: Die

Features

■

Broadband Operation DC to 4GHz

■

Advanced GaN HEMT Technology

■

Packaged Small Signal

Gain = 14dB at 2GHz

■

48V Typical Packaged

Performance



Output Power: 75W at P3dB



Drain Efficiency: 70% at P3dB

■

Large Signal Models Available

■

Chip Dimensions:

0.96mm x 1.92mm x 0.10mm

■

Active Area Periphery: 11.1mm

Applications

■

Commercial Wireless

Infrastructure

■

Cellular and WiMAX

Infrastructure

■

Civilian and Military Radar

■

General Purpose Broadband

Amplifiers

■

Public Mobile Radios

■

Industrial, Scientific, and

Medical

RF IN

VG

RF OUT

VD

GND

RF3932D