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ZXMP6A17DN8 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # ZXMP6A17DN8
Description  DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
PDF  8 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMP6A17DN8 Datasheet(HTML) 4 Page - Diodes Incorporated

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ZXMP6A17DN8
Document Number DS33588 Rev 4 - 2
4 of 8
www.diodes.com
August 2013
© Diodes Incorporated
ZXMP6A17DN8
A Product Line of
Diodes Incorporated
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-60
V
ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-0.5
µA
VDS = -60V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-1.0
V
ID = -250µA, VDS = VGS
Static Drain-Source On-Resistance (Note 12)
RDS(ON)
0.125
Ω
VGS = -10V, ID = -2.3A
0.190
VGS = -4.5V, ID = -1.9A
Forward Transconductance (Notes 12 & 13)
gfs
4.7
S
VDS = -15V, ID = -2.3A
Diode Forward Voltage (Note 12)
VSD
-0.85
-0.95
V
IS = -2.0A, VGS = 0V
Reverse recovery time (Note 13)
trr
25.1
ns
IS = -1.7A, di/dt = 100A/µs
Reverse recovery charge (Note 13)
Qrr
27.2
nC
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
Ciss
637
pF
VDS = -30V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
70
pF
Reverse Transfer Capacitance
Crss
53
pF
Total Gate Charge (Note 14)
Qg

9.0

nC
VGS = -4.5V
VDS = -30V
ID = -2.2A
Total Gate Charge (Note 14)
Qg
17.7
nC
VGS = -10V
Gate-Source Charge (Note 14)
Qgs
1.6
nC
Gate-Drain Charge (Note 14)
Qgd
4.4
nC
Turn-On Delay Time (Note 14)
tD(on)
2.6
ns
VDD = -30V, VGS = -10V
ID = -1A, RG  6.0Ω
Turn-On Rise Time (Note 14)
tr
3.4
ns
Turn-Off Delay Time (Note 14)
tD(off)
26.2
ns
Turn-Off Fall Time (Note 14)
tf
11.3
ns
Notes:
12. Measured under pulsed conditions. Pulse width
 300µs; duty cycle  2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.



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