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ZXMP10A13FTC Datasheet(PDF) 4 Page - Diodes Incorporated

Part # ZXMP10A13FTC
Description  100V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMP10A13FTC Datasheet(HTML) 4 Page - Diodes Incorporated

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ZXMP10A13F
Document number: DS33596 Rev. 4 - 2
4 of 8
www.diodes.com
April 2015
© Diodes Incorporated
ZXMP10A13F
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-100
V
ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-1.0
µA
VDS = -100V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-2.0
-4.0
V
ID = -250µA, VDS = VGS
Static Drain-Source On-Resistance (Note 10)
RDS (on)
1.0
Ω
VGS = -10V, ID = -0.6A
1.45
VGS = -6.0V, ID = -0.5A
Forward Transconductance (Notes 10 and 12)
gfs
1.2
S
VDS = -15V, ID = -0.6A
Diode Forward Voltage (Note 10)
VSD
-0.85
-0.95
V
TJ = +25°C, IS = -0.75A, VGS = 0V
Reverse Recovery Time (Note 12)
trr
29
ns
TJ = +25°C, IF = -0.9A,
di/dt = 100A/µs
Reverse Recovery Charge (Note 12)
Qrr
31
nC
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Ciss
141
pF
VDS = -50V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
13.1
Reverse Transfer Capacitance
Crss
10.8
Turn-On Delay Time (Note 11)
tD(on)
1.6
ns
VDD = -50V, ID = -1.0A,
RG  6.0Ω VGS = -10V
Turn-On Rise Time (Note 11)
tr
2.1
Turn-Off Delay Time (Note 11)
tD(off)
5.9
Turn-Off Fall Time (Note 11)
tf
3.3
Total Gate Charge (Note 11)
Qg
1.8
nC
VDS = -50V, VGS = -5.0V,
ID = -0.6A
Total Gate Charge (Note 11)
Qg
3.5
nC
VDS = -50V, VGS = -10V,
ID = -0.6A
Gate-Source Charge (Note 11)
Qgs
0.6
Gate-Drain Charge (Note 11)
Qgd
1.6
Notes:
10. Measured under pulsed conditions. Pulse width = 300µ
s. Duty cycle ≤ 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing.



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