ZXTP2013Z_15 datasheet(4/6 Pages) DIODES

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ZXTP2013Z

ISSUE 1 - JUNE 2005

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

Collector-base breakdown voltage

BVCBO

-140

-160

IC = -100 A

Collector-emitter breakdown voltage

BVCER

-140

-160

IC =-1 A, RB

Collector-emitter breakdown voltage

BVCEO

-100

-115

IC = -10mA*

Emitter-base breakdown voltage

BVEBO

-7

-8.1

IE = -100 A

Collector cut-off current

ICBO

-20

-0.5

VCB = -100V

VCB = -100V, Tamb=100 C

Collector cut-off current

ICER

-20

-0.5

VCB = -100V

VCB = -100V, Tamb=100 C

Emitter cut-off current

IEBO

-10

VEB = -6V

Collector-emitter saturation voltage

VCE(SAT)

-20

-65

-110

-230

-30

-85

-135

-300

IC = -0.1A, IB = -10mA*

IC = -1A, IB = -100mA*

IC = -2A, IB = -200mA*

IC = -4A, IB = -400mA*

Base-emitter saturation voltage

VBE(SAT)

-970

-1060

IC = -4A, IB = -400mA*

Base-emitter turn on voltage

VBE(ON)

-910

-1030

IC = -4A, VCE = -1V*

Static forward current transfer ratio

hFE

100

250

200

300

IC = -10mA, VCE = -1V*

IC = -1A, VCE = -1V*

IC = -3A, VCE = -1V*

IC = -4A, VCE = -1V*

IC = -10A, VCE = -1V*

Transition frequency

125

MHz IC = 100mA, VCE = 10V

f=50MHz

Output capacitance

COBO

VCB = -10V, f= 1MHz*

Switching times

tON

tOFF

540

IC = 1A, VCC = 10V,

IB1 =IB2 = 100mA

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

* Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

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