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BFU550W Datasheet(PDF) 7 Page - NXP Semiconductors |
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BFU550W Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 22 page ![]() BFU550W All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved. Product data sheet Rev. 1 — 13 January 2014 7 of 22 NXP Semiconductors BFU550W NPN wideband silicon RF transistor 9.1 Graphs Tamb =25 C. (1) IB =25 A (2) IB =75 A (3) IB = 125 A (4) IB = 175 A (5) IB = 225 A (6) IB = 275 A (7) IB = 325 A Fig 2. Collector current as a function of collector-emitter voltage; typical values Tamb =25 C. (1) VCE =3.0 V (2) VCE =8.0 V VCE =8V. (1) Tamb = 40 C (2) Tamb = +25 C (3) Tamb = +125 C Fig 3. DC current gain as function of collector current; typical values Fig 4. DC current gain as function of collector current; typical values |
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