BUJD103AD

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Product data sheet

Rev. 3 — 3 August 2010

2 of 13

NXP Semiconductors

BUJD103AD

NPN power transistor with integrated diode

2.

Pinning information

[1]

it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package

3.

Ordering information

4.

Limiting values

Table 2.

Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

B

base

SOT428 (DPAK)

2

C

collector[1]

3E

emitter

3

2

mb

1

sym131

C

E

B

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BUJD103AD

DPAK

plastic single-ended surface-mounted package (DPAK); 3 leads

(one lead cropped)

SOT428

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-emitter peak voltage

-

700

V

collector-base voltage

-

700

V

collector-emitter voltage

-

400

V

collector current

DC; see Figure 1; see Figure 2;

see Figure 4

-4

A

peak collector current

see Figure 1; see Figure 2; see Figure 4

-8

A

base current

DC

-

2

A

peak base current

-

4

A

total power dissipation

-80

W

storage temperature

-65

150

°C

junction temperature

-

150

°C