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IRFI4410ZPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFI4410ZPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFI4410ZPbF 2 www.irf.com S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.91mH RG = 25Ω, IAS = 26A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at TJ approximately 90°C
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 95 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 7.9 9.3 m V GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG(int) Internal Gate Resistance ––– 0.9 ––– Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 80 ––– ––– S Qg Total Gate Charge ––– 81 110 nC Qgs Gate-to-Source Charge ––– 18 ––– Q gd Gate-to-Drain ("Miller") Charge ––– 23 ––– td(on) Turn-On Delay Time ––– 15 ––– ns tr Rise Time ––– 27 ––– td(off) Turn-Off Delay Time ––– 43 ––– t f Fall Time ––– 30 ––– Ciss Input Capacitance ––– 4910 ––– pF Coss Output Capacitance ––– 330 ––– Crss Reverse Transfer Capacitance ––– 150 ––– C oss eff. (ER) Effective Output Capacitance (Energy Related) ––– 420 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 680 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 43 A (Body Diode) ISM Pulsed Source Current ––– ––– 170 A (Body Diode)à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 47 71 ns TJ = 25°C VR = 85V, ––– 54 81 T J = 125°C I F = 26A Qrr Reverse Recovery Charge ––– 110 160 nC TJ = 25°C di/dt = 100A/μs e ––– 140 210 T J = 125°C IRRM Reverse Recovery Current ––– 2.5 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 10V e V GS = 0V V DS = 50V Conditions V DS = 50V, ID = 26A ID = 26A VGS = 10V e V DD = 65V I D = 26A RG = 2.7 VDS = VGS, ID = 150μA V DS = 100V, VGS = 0V V DS = 100V, VGS = 0V, TJ = 125°C VDS = 50V VGS = 20V VGS = -20V Conditions V GS = 0V, ID = 250μA Reference to 25°C, I D = 5mAe VGS = 10V, ID = 26A e p-n junction diode. TJ = 25°C, IS = 26A, VGS = 0V e ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V h, See Fig.11 V GS = 0V, VDS = 0V to 80V gà Conditions MOSFET symbol showing the integral reverse |
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