2008 .9. 17

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SEMICONDUCTOR

TECHNICAL DATA

KIC7S08FU

SILICON MONOLITHIC CMOS

DIGITAL INTEGRATED CIRCUIT

Revision No : 4

2-INPUT AND GATE

The KIC7S08FU is a high speed C

fabricated with silicon gate C

It achieves high speed operation similar to equivalent LSTTL while

maintaining the C

The internal circuit is composed of 2 stages including buffer output,

which enables high noise immunity and stable output.

All inputs are equipped with protection circuits against static discharge

or transient excess voltage.

FEATURES

・High Speed : t

・Low Power Dissipation : I

A(Max.) at Ta=25℃.

・High Noise Immunity : V

・Output Drive Capability : 5 LSTTL Loads.

・Symmetrical Output Impedance : | I

・Balanced Propagation Delays : t

・Wide Operating Voltage Range : V

DIM

MILLIMETERS

A

B

D

G

USV

2.00 0.20

1.25 0.1

2.1 0.1

0.2+0.10/-0.05

0-0.1

0.9 0.1

0.65

0.15+0.1/-0.05

B1

H

C

T

G

1

3

2

B

B1

D

T

5

4

1.3 0.1

A1

+_

+_

+_

+_

+_

MAXIMUM RATINGS (Ta=25℃)

MARKING

Type Name

Lot No.

ST

PIN CONNECTION (TOP VIEW)

1

2

3

4

OUT Y

IN B

IN A

GND

CHARACTERISTIC

SYMBOL

RATING

UNIT

Supply Voltage Range

-0.5～7

V

DC Input Voltage

V

DC Output Voltage

V

Input Diode Current

±20

mA

Output Diode Current

±20

mA

DC Output Current

±12.5

mA

±25

mA

Power Dissipation

200

mW

Storage Temperature

-65～150

℃

Lead Temperature (10s)

260

℃