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LPM3401 Datasheet(PDF) 1 Page - Lowpower Semiconductor inc |
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LPM3401 Datasheet(HTML) 1 Page - Lowpower Semiconductor inc |
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1 / 6 page  Preliminary Datasheet LPM3401 LPM3401 – 00 Version 1.0 Datasheet Dec.-2011 www.lowpowersemi.com Page 1 of 6 LPM3401 - -20V/4.2A P-Channel Enhancement Mode Field Effect Transistor General Description The LPM3401 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. Ordering Information LPM3401 □ □ □ F: Pb-Free Package Type B3: SOT23 Features ■ -20V/-4.2A,RDC(ON)≤54mΩ(typ.)@VGS=-2.5V ■ -20V/-3.0A,RDC(ON)≤60mΩ(typ.)@VGS=-4.5V ■ Super high density cell design for extremely low RDC(ON) ■ SOT23 Package Applications Portable Media Players Cellular and Smart mobile phone LCD DSC Sensor Wireless Card Marking Information XXX : The production cycle and the batch. Pin Configurations Device Marking Package Shipping LPM3401B3F A1XXX SOT23-3 3K/REEL SOT23L(Top View) |
Similar Part No. - LPM3401 |
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Similar Description - LPM3401 |
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