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G4PC30UD Datasheet(PDF) 5 Page - International Rectifier

Part # G4PC30UD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
PDF  11 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

G4PC30UD Datasheet(HTML) 5 Page - International Rectifier

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IRG4PC30UDPbF
www.irf.com
5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
400
800
1200
1600
2000
1
10
100
CE
V
, Collector-to-Emitter Voltage (V)
A
V
= 0V,
f = 1MHz
C
= C
+ C
, C
SHORTED
C
= C
C
= C
+ C
GE
ies
ge
gc
ce
res
gc
oes
ce
gc
Cies
Cres
Coes
0
4
8
12
16
20
0
10
203040
50
g
Q , Total Gate Charge (nC)
A
V
= 400V
I
= 12A
CE
C
0.1
1
10
-60
-40
-20
0
20
40
60
80
100 120 140 160
A
T , Junction Temperature (°C)
J
R
= 23
Ω
V
= 15V
V
= 480V
I = 24A
I = 12A
I = 6.0A
G
GE
CC
C
C
C
0.50
0.52
0.54
0.56
0.58
0.60
0
102030
405060
G
A
R , Gate Resistance (
Ω)
V
= 480V
V
= 15V
T
= 25°C
I
= 12A
CC
GE
J
C



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