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IRG4PC60FPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG4PC60FPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRG4PC60FPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 290 340 IC = 40A Qge Gate - Emitter Charge (turn-on) 40 47 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) 100 130 VGE = 15V td(on) Turn-On Delay Time 42 tr Rise Time 66 TJ = 25°C td(off) Turn-Off Delay Time 310 360 IC = 60A, VCC = 480V tf Fall Time 170 220 VGE = 15V, RG = 5.0Ω Eon Turn-On Switching Loss 0.30 Energy losses include "tail" Eoff Turn-Off Switching Loss 4.6 mJ See Fig. 10, 11, 13, 14 Ets Total Switching Loss 4.96.3 td(on) Turn-On Delay Time 39 TJ = 150°C, tr Rise Time 66 IC = 60A, VCC = 480V td(off) Turn-Off Delay Time 470 VGE = 15V, RG = 5.0Ω tf Fall Time 300 Energy losses include "tail" Ets Total Switching Loss 8.8 mJ See Fig. 13, 14 LE Internal Emitter Inductance 13 nH Measured 5mm from package Cies Input Capacitance 6050 VGE = 0V Coes Output Capacitance 360 pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance 66 = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 16 V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.13 V/°C VGE = 0V, IC = 1.0mA 1.5 1.8 IC = 60A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage 1.7 IC = 90A See Fig.2, 5 1.5 IC = 60A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage -11 mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance
36 69 S VCE = 100V, IC = 60A 250 VGE = 0V, VCE = 600V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot. Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = TBD µH, RG = 5.0Ω. (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. Notes: |
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