2

Symbol

Parameter

Units

Absolute

Max.

Vdd

V

3.6

Idd

mA

20

CW RF Input Power (Vdd = 2.7V, Idd = 7.5mA)

dBm

15

mW

72

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

(Vdd = 2.7V, Idd = 7.5mA),

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Assuming DC quiescent conditions.

3. Thermal resistance measured using Infra-Red

measurement technique.

Electrical Specifications

Table 1. Performance at Vdd = Vsd = 2.7V, Idd = 7.5mA (Rbias = 6.8k Ohm) nominal operating conditions

Symbol

Parameter and Test Condition

Units

Min.

Typ

Max.

G

Gain

dB

12

14.2

16.3

Noise Figure

dB

–

1.26

1.7

IP1dB

Input 1dB Compressed Power

dBm

–

+2

–

dBm

0

+5

–

S11

Input Return Loss

dB

–

-9

–

S22

Output Return Loss

dB

–

-12

–

S12

Reverse Isolation

dB

–

-22

–

Low Band Rejection

Worst-case relative to 1.575GHz within

(827-928)MHz band, tested at 928MHz

dBc

79

89

–

High Band Rejection

Worst-case relative to 1.575GHz within

(1710-1980)MHz band, tested at 1850MHz

dBc

74

80

–

WLAN Band Rejection

Worst-case relative to 1.575GHz within

(2400-2500)MHz band, tested at 2500MHz

dBc

67

72

–

Input 1dB gain compression interferer signal level at

890MHz

dBm

–

21

–

Input 1dB gain compression interferer signal level at

1710MHz

dBm

–

32

–

Input 1dB gain compression interferer signal level at

1885MHz

dBm

–

37

–

Input 1dB gain compression interferer signal level at

2500MHz

dBm

–

35

-

(2-tone @ 1712.7 MHz and 1850MHz)

dBm

–

62

–

Idd

Supply DC current at Shutdown (SD) voltage Vsd = 2.7V

mA

4

7.5

15

Ish

Shutdown Current @ VSD = 0V

uA

–

0.5

110