2

Symbol

Parameter

Units

Absolute Max.

Vdd, VddBias

Supply voltages, bias supply voltage

V

6

Vc

Control Voltage

V

(Vdd)

CW RF Input Power

dBm

20

W

7.2

Junction Temperature

C

150

Storage Temperature

C

-65 to 150

Notes:

1. Operation of this device in excess of any

of these limits may cause permanent

damage.

2. Thermal resistance measured using Infra-

Red Measurement Technique at Vdd =

5.5 V operating voltage.

3. Board temperature (TB) is 25° C, for TB

> 56.4° C derate the device power at 77 mW

per °C rise in Board (package belly) tem-

perature.

Electrical Specifications

W-CDMA Test model #1, 64DPCH downlink signal operation unless otherwise stated.

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Vdd

Supply Voltage

V

5.0

Idqtotal

Quiescent Supply Current

mA

400

600

Gain

Gain

dB

38

41.9

OP1dB

Output Power at 1dB Gain Compression

dBm

37.2

ACLR1 @ Pout = 27.2 dBm

W-CDMA Test model #1, 64DPCH downlink signal

dBc

-50

PAE @ Pout = 27.2 dBm

Power Added Efficiency

%

11.5

13.6

|S11|

Input Return Loss, 50

 source

dB

17.3

DetR

Detector RF dynamic range

dB

20

W-CDMA Test model #1, 64DPCH downlink signal operation unless otherwise stated.

Symbol

Parameter and Test Condition

Units

Typ.

Vdd

Supply Voltage

V

5.5

Idqtotal

Quiescent Supply Current

mA

490

Gain

Gain

dB

41.9

OP1dB

Output Power at 1dB Gain Compression

dBm

37.6

ACLR1 @ Pout = 27.9 dBm

W-CDMA Test model #1, 64DPCH downlink signal

dBc

-50

PAE @ Pout = 27.9 dBm

Power Added Efficiency

%

13.2

|S11|

Input Return Loss, 50

 source

dB

17.5

DetR

Detector RF dynamic range

dB

20