VMMK-2303 datasheet(2/11 Pages) AVAGO

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Table 1. Absolute Maximum Ratings [1]

Sym

Parameters/Condition

Unit

Absolute Max

Supply Voltage (RF Output) [2]

Power Down Control Voltage

Device Current [2]

Pin, max

CW RF Input Power (RF Input) [3]

dBm

+13

Pdiss

Total Power Dissipation

300

Tch

Max channel temperature

°C

150

θjc

Thermal Resistance [4]

°C/W

140

Notes

1. Operation in excess of any of these conditions may result in permanent damage to this device.

2. Bias is assumed DC quiescent conditions

3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25°C

4. Thermal resistance is measured from junction to board using IR method

Table 2. DC and RF Specifications

TA = 25°C, Frequency = 3 GHz, Vd = 1.8V, Vc = 1.8V, Zin = Zout = 50Ω (unless otherwise specified)

Sym

Parameters/Condition

Unit

Minimum

Typ.

Maximum

Device Current

Id_leakage

Current in Shut Down Mode

µA

0.03

NF [1]

Noise Figure

–

2.6

Ga [1]

Associated Gain

OIP3 [2,3]

Output 3rd Order Intercept

dBm

+22

–

Output P-1dB [2]

Output Power at 1dB

Gain Compression

dBm

–

IRL [2]

Input Return Loss

–

-13

–

ORL [2]

Output Return Loss

–

-19

–

Notes:

1. Measure data obtained using 300um G-S probe on production wafers

2. Measure data obtained using 300um G-S-G probe on PCB substrate

3. OIP3 test condition: F1=3.0GHz, F2=3.01GHz, Pin=-20dBm

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