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BAV170 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BAV170 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 9 page ![]() 2003 Mar 25 2 NXP Semiconductors Product data sheet Low-leakage double diode BAV170 FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATION • Low-leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common cathode configuration. PINNING PIN DESCRIPTION 1 anode 2 anode 3 common cathode Fig.1 Simplified outline (SOT23) and symbol. handbook, 4 columns 21 3 Top view MAM108 21 3 MARKING Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. TYPE NUMBER MARKING CODE(1) BAV170 JX* |
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