2

Symbol

Parameters

Unit

Max

V7

Gate Supply Voltage

V

-3.6 to 0

Gate Supply Voltage

V

-2.5 to +2.5

W

0.8

CW Input Power

dBm

23

Operating Channel Temp.

°C

+150

Storage Case Temp.

°C

-65 to +155

Maximum Assembly Temp (30 sec max)

°C

+320

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.

3. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be

maintained at the lowest possible levels.

Symbol

Parameters and Test Conditions

Unit

Min

Typ

Max

Vd

Drain Supply Voltage

V

5

mA

100

V

-3.6

-2.0

-1.2

V

-2.5

+1.2

+2.5

R

°C/W

12.8

Channel Temperature @85°C Backside

°C

91.4

:

Symbol

Parameters and Test Conditions

Units

Minimum

Typical

Maximum

Freq

Operational Frequency

GHz

30KHz

80

Gain

Small-signal Gain Freq = 2, 10, 20, 30, 40 GHz

dB

7.5

8

Output Power at 1dB Gain Compression Freq = 40GHz

dBm

13

15

OIP3

Third Order Output Intercept Point@20GHz

'f = 10MHz,

Po = +10dBm, SCL

dBm

20

Input Return Loss

dB

10

Output Return Loss

dB

15

Isolation

Reverse Isolation

dB

27

Notes:

2. 100% on-wafer RF test of Gain, Return Losses and Reverse Isolation is done at frequencies: 2,10, 20, 30, and 40 GHz.