2

Absolute

Symbol

Parameter

Units

Maximum

V

7

V

-5 to 1

V

-5 to 1

A

1

Gate Current

mA

46

W

3

dBm

+30

Channel Temperature

°C

150

Storage Temperature

°C

-65 to 150



ch_b

°C/W

33

Notes:

1. Operation of this device in excess of any one

of these parameters may cause permanent

damage.

2. Assumes DC quiescent conditions.

4. With 10 Ohm series resistor in gate supply

and 3:1 VSWR.

5. Channel-to-board

thermal

resistance

measured

using

150°C

Liquid

Crystal

Measurement method.

6. Device can safely handle +30dBm RF Input

OIP3 (dBm)

Figure 2. OIP3 LSL = 38.5, Nominal = 41.7.

35

41

38

44

47

240

200

160

120

80

40

0

Cpk = 1.66

Stdev = 0.6

-3 Std

+3 Std

P1dB (dBm)

Figure 3. P1dB LSL = 28.5, Nominal = 30.

28

30

29

31

200

160

120

80

40

0

Cpk = 3.24

Stdev = 0.15

-3 Std

+3 Std

GAIN (dB)

Figure 4. Gain LSL = 13.5,

Nominal = 14.8, USL = 16.5.

13

15

14

16

17

150

120

90

60

30

0

Cpk = 1.4

Stdev = 0.31

-3 Std

+3 Std

Notes:

6. Distribution data sample size is 400 samples taken from 4 different

wafers and 3 different lots. Future wafers allocated to this product

may have nominal values anywhere between the upper and lower

limits.

1000

900

800

700

600

500

400

300

200

100

0

02

4

6

8

0.8 V

0.7 V

0.5 V

0.6 V

PAE (%)

Figure 5. PAE LSL = 52, Nominal = 68.9.

52

62

57

67

72

77

82

160

120

80

40

0

Cpk = 3.03

Stdev = 1.85

-3 Std

+3 Std

7. Measurements are made on production test board, which represents

a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses

have been de-embedded from actual measurements.