Data Sheet No. PD60172 Rev.G

Typical Connection

HIGH AND LOW SIDE DRIVER

Features

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

IR21814

IR2181

www.irf.com

1

V

CC

V

B

V

S

HO

LO

COM

HIN

LIN

up to 600V

TO

LOAD

V

CC

LIN

HIN

up to 600V

TO

LOAD

V

CC

V

B

V

S

HO

LO

COM

HIN

V

SS

LIN

V

CC

V

SS

LIN

HIN

(Refer to Lead Assignments for correct pin

configuration). This/These diagram(s) show

electrical connections only. Please refer to

our Application Notes and DesignTips for

proper circuit board layout.

Description

The IR2181(4)(S) are high voltage,

high speed power MOSFET and IGBT

drivers with independent high and low

side referenced output channels. Pro-

prietary HVIC and latch immune

CMOS technologies enable rugge-

dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to

3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-

conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side

configuration which operates up to 600 volts.

Part

Input

logic

Cross-

conduction

prevention

logic

Dead-Time

Ground Pins

Ton/Toff

2181

COM

21814

HIN/LIN

no

none

VSS/COM

180/220 ns

2183

Internal 500ns

COM

21834

HIN/LIN

yes

Program 0.4 ~ 5 us

VSS/COM

180/220 ns

2184

Internal 500ns

COM

21844

IN/SD

yes

Program 0.4 ~ 5 us

VSS/COM

680/270 ns

IR2181/IR2183/IR2184 Feature Comparison

Packages

14-Lead PDIP

IR21814

8-Lead PDIP

IR2181

14-Lead SOIC

IR21814S

8-Lead SOIC

IR2181S