2N4918_15 datasheet(2/3 Pages) JMNIC

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Product Specification

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JMnic

Silicon PNP Power Transistors

2N4918 2N4919 2N4920

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2N4918

-40

2N4919

-60

VCEO

Collector-emitter

sustaining voltage

2N4920

IC=-0.1A; IB=0

-80

VCEsat

Collector-emitter saturation voltage

IC=-1.0A ;IB=-0.1A

-0.6

VBEsat

Emitter-base saturation voltage

IC=-1.0A ;IB=-0.1A

-1.3

VBE

Emitter-base on voltage

IC=-1A ; VCE=-1V

-1.3

2N4918

VCE=-20V; IB=0

2N4919

VCE=-30V; IB=0

ICEO

Collector cut-off current

2N4920

VCE=-40V; IB=0

-0.5

ICBO

Collector cut-off current

VCB= Rated VCBO ;IE=0

-0.1

ICEX

Collector cut-off current

VCE= Rated VCEO; VBE(off)=1.5V

TC=125℃

-0.1

-0.5

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-1.0

hFE-1

DC current gain

IC=-50mA ; VCE=-1V

hFE-2

DC current gain

IC=-500mA ; VCE=-1V

150

hFE-3

DC current gain

IC=-1A ; VCE=-1V

Transition frequency

IC=-250mA ; VCE=-10V;f=1MHz

3.0

MHz

COB

Output capacitance

f=100kHz ; VCB=-10V;IE=0

100

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