2N5885_15 datasheet(2/3 Pages) JMNIC

2 / 3 page

Product Specification

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JMnic

Silicon NPN Power Transistors

2N5885 2N5886

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2N5885

VCEO(sus)

Collector-emitter

sustaining voltage

2N5886

IC=0.2A ;IB=0

VCEsat-1

Collector-emitter saturation voltage

IC=15A; IB=1.5A

VCEsat-2

Collector-emitter saturation voltage

IC=25A; IB=6.25A

VBEsat

Collector-emitter saturation voltage

IC=25A; IB=6.25A

2.5

VBE

Base-emitter on voltage

IC=10A ; VCE=4V

1.5

ICBO

Collector cut-off current

VCB=ratedVCBO; IB=0

2N5885

VCE=30V; IB=0

ICEO

Collector cut-off current

2N5886

VCE=40V; IB=0

VCE=ratedVCEO;

ICEV

Collector cut-off current

(VBE(off)=1.5V)

VCE=ratedVCEO; TC=150℃

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=3A ; VCE=4V

hFE-2

DC current gain

IC=10A ; VCE=4V

100

hFE-3

DC current gain

IC=25A ; VCE=4V

Trainsistion frequency

IC=1A ; VCE=10V;f=1MHz

MHz

Switching times

Rise time

0.7

μs

Storage time

1.0

μs

Fall time

IC=10A ;IB1=- IB2=1A

VCC=30V

0.8

μs

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