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2N6249 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Part # 2N6249
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Direct Link  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

2N6249 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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Product Specification
www.jmnic.com
JMnic
Silicon NPN Power Transistors
2N6249 2N6250 2N6251
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6249
200
2N6250
275
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6251
IC=200mA ; IB=0
350
V
2N6249
IC=10A;IB=1.0A
2N6250
IC=10A;IB=1.25 A
VCE(sat)
Collector-emitter
saturation voltage
2N6251
IC=10A;IB=1.67 A
1.5
V
2N6249
IC=10A;IB=1.0A
2N6250
IC=10A;IB=1.25 A
VBE(sat)
Base-emitter
saturation
voltage
2N6251
IC=10A;IB=1.67 A
2.25
V
ICEV
Collector cut-off current
VCE=RatedVCEV;VBE=-1.5V
TC=125℃
5.0
10
mA
2N6249
VCE=150V;IB=0
2N6250
VCE=225V;IB=0
ICEO
Collector cut-off current
2N6251
VCE=300V;IB=0
5.0
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
1.0
mA
2N6249
10
50
2N6250
8
50
hFE
DC current gain
2N6251
IC=10A ; VCE=3V
6
50
fT
Transition frequency
IC=1A ; VCE=10V
2.5
MHz
Is/b
Second breakdown collector current
With base forward biased
VCE=30V,t=1.0s,
Nonrepetitive
5.8
A
Switching times
tr
Rise time
2.0
μs
ts
Storage time
3.5
μs
tf
Fall time
For 2N6249
IC=10A; IB1=-IB2=1.0A;VCC=200V
For 2N6250
IC=10A;IB1=-IB2=1.25A;VCC=200V
For 2N6251
IC=10A;IB1=-IB2=1.67A;VCC=200V
1.0
μs



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