IRLMS1902PBF datasheet(2/8 Pages) IRF

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IRLMS1902PbF

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Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-SourceBreakdownVoltage

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

0.032

V/°C Reference to 25°C, ID = 1mA

0.10

VGS = 4.5V, ID = 2.2A

0.17

VGS = 2.7V, ID = 1.1A

VGS(th)

Gate Threshold Voltage

0.70

VDS = VGS, ID = 250µA

gfs

ForwardTransconductance

3.2

VDS = 10V, ID = 1.1A

1.0

VDS = 16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 125°C

Gate-to-SourceForwardLeakage

100

VGS = 12V

Gate-to-SourceReverseLeakage

-100

VGS = -12V

TotalGateCharge

4.7

7.0

ID = 2.2A

Qgs

Gate-to-SourceCharge

0.97 1.5

VDS = 16V

Qgd

Gate-to-Drain ("Miller") Charge

1.8

2.6

VGS = 4.5V, See Fig. 6 and 9

td(on)

Turn-On Delay Time

7.0

VDD = 10V

Rise Time

ID = 2.2A

td(off)

Turn-Off Delay Time

RG = 6.0Ω

Fall Time

4.0

RD = 4.4Ω, See Fig. 10

Ciss

InputCapacitance

300

VGS = 0V

Coss

OutputCapacitance

120

VDS = 15V

Crss

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

Ω

RDS(on)

StaticDrain-to-SourceOn-Resistance

IDSS

Drain-to-SourceLeakageCurrent

Parameter

Min. Typ. Max. Units

Conditions

ContinuousSourceCurrent

MOSFET symbol

(BodyDiode)

showing the

ISM

PulsedSourceCurrent

integralreverse

(Body Diode)

p-n junction diode.

VSD

DiodeForwardVoltage

1.2

TJ = 25°C, IS = 2.2A, VGS = 0V

trr

ReverseRecoveryTime

TJ = 25°C, IF = 2.2A

Qrr

ReverseRecoveryCharge

di/dt = 100A/µs

Source-Drain Ratings and Characteristics

1.7

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ 2.2A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Notes:

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Surface mounted on FR-4 board, t ≤ 5sec.

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