MAX3664ESA datasheet(2/12 Pages) MAXIM

2 / 12 page

622Mbps, Ultra-Low-Power, 3.3V

Transimpedance Preamplifier for SDH/SONET

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ABSOLUTE MAXIMUM RATINGS

DC ELECTRICAL CHARACTERISTICS

(VCC = +3.3V ±0.3V, COMP = GND, 100Ω load between OUT+ and OUT-, TA = -40°C to +85°C. Typical values are at TA = +25°C,

unless otherwise noted.) (Notes 1, 2)

AC ELECTRICAL CHARACTERISTICS

(VCC = +3.3V ±0.3V, CCOMP = 400pF, CIN = 1.1pF, outputs terminated into 50Ω, 8-pin SO package in MAX3664 EV board,

TA = +25°C, unless otherwise noted.) (Notes 3, 4)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

Note 3: AC Characteristics are guaranteed by design.

Note 4: CIN is the total capacitance at IN.

Note 5: PWD = | 2 x Pulse width - Period |

Note 6: DC to 470MHz, measured with 3-pole Bessel filter at output.

Note 1: Dice are tested at Tj = +27°C.

Note 2: µMAX package tested at TA = +25°C to +85°C.

VCC ........................................................................-0.5V to +5.5V

Continuous Current

IN, INREF1, INREF2, COMP, FILT....................................5mA

OUT+, OUT-...................................................................25mA

Continuous Power Dissipation (TA = +85°C)

SO (derate 5.88mW/°C above +85°C) ........................383mW

µMAX (derate 4.1mW/°C above +85°C) .....................268mW

Operating Junction Temperature (die) ..............-40°C to +150°C

Processing Temperature (die) .........................................+400°C

Storage Temperature Range .............................-65°C to +160°C

Lead Temperature (soldering, 10sec) .............................+300°C

IIN = 0

IIN = 0 to 20µA

IIN = 0 to 300µA

IIN = 300µA

Differential output

f < 1MHz, referred to output

IIN = 200µA, CCOMP = 400pF

CONDITIONS

ICC

Supply Current

±5

0.8

0.95

VIN

Input Bias Voltage

Gain Nonlinearity

950

VOUT(max)

Maximum Output Voltage

Ω

ZOUT

Output Impedance (per side)

Ω

4.5

7.5

z21

Small-Signal Transimpedance

VCC - 1.3

Output Common-Mode Level

PSRR

Power-Supply Rejection Ratio

±7

∆VOUT

Differential Output Offset

UNITS

MIN

TYP

MAX

SYMBOL

PARAMETER

Relative to gain at 10MHz

CIN = 1.1pF (Note 6), IIN = 0

2µA to 100µA peak input current,

50% duty cycle, 1–0 pattern

100µA to 300µA peak input current,

50% duty cycle, 1–0 pattern

CIN = 0.3pF (Note 6), IIN = 0

CONDITIONS

kHz

150

MHz

590

BW-3dB

Small-Signal Bandwidth

Low-Frequency Cutoff

RMS Noise Referred to Input

100

200

PWD

Pulse-Width Distortion

(Note 5)

UNITS

MIN

TYP

MAX

SYMBOL

PARAMETER

Ω

800

1000

1200

RFILT

Filter Resistor (die only)

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