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IRF460 Datasheet(PDF) 1 Page - International Rectifier |
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IRF460 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 7 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 21 ID @ VGS = 10V, TC = 100°C Continuous Drain Current 14 IDM Pulsed Drain Current À 84 PD @ TC = 25°C Max. Power Dissipation 300 W Linear Derating Factor 2.4 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single PulseAvalanche Energy Á 1200 mJ IAR Avalanche Current À 21 A EAR Repetitive Avalanche Energy À 30 mJ dv/dt Peak Diode Recovery dv/dt  3.5 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range °C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5 (typical) g The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on- state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. A REPETITIVE AVALANCHEAND dv/dt RATED IRF460 HEXFET ®TRANSISTORS THRU-HOLE (TO-204AA/AE) 09/04/14 www.irf.com 1 500V, N-CHANNEL TO-3 Product Summary Part Number BVDSS RDS(on) ID IRF460 500V 0.27 Ω 21A Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling For footnotes, refer to the last page PD-90467A |
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