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CDM7600LR Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CDM7600LR Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() 600V, N-Channel UltraMOS™ Power MOSFETs in the DPAK package CDM4-600LR (4A) CDM7-600LR (7A) DPAK Central Semiconductor’s CDM4-600LR (4A, 600V) and CDM7-600LR (7A, 600V) are 600 Volt N-Channel MOSFETs designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting, and power inverters. These MOSFETs combine high voltage capability with ultra low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency. • Energy efficiency • High power density • Industry standard DPAK package Benefits: Features: • High voltage capability • Low gate charge • Ultra Low rDS(ON) Applications: • Power Factor Correction (PFC) • Solid State Lighting (SSL) • Alternative energy inverters Typical Electrical Characteristics CDM4-600LR Drain Source On Resistance CDM7-600LR Drain Source On Resistance 145 Adams Avenue • Hauppauge • New York • 11788 • USA • www.centralsemi.com Services: Weblink/Samples: For more information or to request samples visit: www.centralsemi.com/info/UltraMOS • Bonded Inventory • Custom Electrical Screening • Custom Electrical Characteristic Curves • SPICE Models • Custom Packaging • Package Base Options • Custom Device Development / Multi Discrete Modules (MDM™) Through-hole 600V Low rDS(ON) MOSFET CDM22011-600LRFP (11A, N-Channel) TO-220FP package Also available: Maximum Ratings (TA = 25˚C unless otherwise noted) Electrical Characteristics: (TA = 25˚C unless otherwise noted) Type No. ID (A) MAX PD (W) MAX TJ, Tstg (˚C) MAX ΘJA (˚C/W) MAX BVDSS (V) MIN VGS(th) (V) MIN MAX rDS(ON) @ VGS @ ID (Ω) (Ω) (V) (A) TYP MAX Qgs (nC) TYP Ciss (pF) TYP Crss (pF) TYP CDM4-600LR 4.0 38 -55 to +150 110 600 2.0 4.0 0.65 0.95 10 2.0 2.04 328 1.31 CDM7-600LR 7.0 60 -55 to +150 110 600 2.0 4.0 0.53 0.58 10 3.5 2.62 440 1.94 www.centralsemi.com/UltraMOS Product Brief Product Brief |
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