BLF2425M7L100_15 datasheet(3/13 Pages) PHILIPS

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BLF2425M7L100_2425M7LS100

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Product data sheet

Rev. 1 — 6 December 2013

3 of 13

NXP Semiconductors

BLF2425M7L(S)100

Power LDMOS transistor

Characteristics

Test information

7.1 Ruggedness in class-AB operation

The BLF2425M7L100 and BLF2425M7LS100 are capable of withstanding a load

mismatch corresponding to VSWR = 10 : 1 through all phases under the following

conditions: VDS =28 V; IDq =900 mA; PL = 100 W (CW); f = 2300 MHz.

Table 6.

DC characteristics

Tj = 25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

V(BR)DSS drain-source breakdown voltage

VGS =0 V; ID =1mA

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 150 mA

1.5

1.8

2.3

IDSS

drain leakage current

VGS =0 V; VDS =28V

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10 V

25.1

IGSS

gate leakage current

VGS =11 V; VDS = 0 V

500

gfs

forward transconductance

VDS =10 V; ID =5.35A

10.5 -

RDS(on)

drain-source on-state resistance

VGS =VGS(th) + 3.75 V;

ID =5.25A

-0.1



Table 7.

RF characteristics

Test signal: single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).

PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f1 =2300MHz;

f2 = 2400 MHz; RF performance at VDS =28V; IDq = 900 mA; Tcase =25 C; unless otherwise

specified; in a class-AB production test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL(AV) =20 W

17.3

RLin

input return loss

PL(AV) =20 W

14



drain efficiency

PL(AV) =20 W

ACPR885k

adjacent channel power ratio (885 kHz) PL(AV) =20 W

46

40

dBc

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