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10N30L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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10N30L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() 10N30 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-738.b ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 300 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous (TC=25°C) ID 10 A Pulsed (Note 2) IDM 40 A Avalanche Current (Note 2) IAR 11 A Avalanche Energy Single Pulsed (Note 3) EAS 360 mJ Repetitive (Note 4) EAR 13.5 mJ Power Dissipation TO-220 PD 135 W TO-251/TO-252 83 Derate above 25°C TO-220 1.07 W/°C TO-251/TO-252 0.66 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 5.7mH, IAS = 10.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 10.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220 θJC 0.93 °C/W TO-251/TO-252 1.5 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 300 V Drain-Source Leakage Current IDSS VDS=300V, VGS=0V 1 µA Gate- Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=10A 0.5 0.65 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 840 1090 pF Output Capacitance COSS 250 325 pF Reverse Transfer Capacitance CRSS 80 110 pF |
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