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IRLS3813TRLPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRLS3813TRLPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  IRLS3813PbF 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 23, 2014 HEXFET® Power MOSFET D S G G D S Gate Drain Source Benefits Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant VDSS 30V RDS(on) typ. 1.60m max 1.95m ID (Silicon Limited) 247A ID (Package Limited) 160A D2Pak IRLS3813PbF S D G Base part number Package Type Standard Pack Form Quantity IRLS3813PbF D2-Pak Tube 50 IRLS3813PbF Tape and Reel Left 800 IRLS3813TRLPbF Orderable Part Number Absolute Maximum Rating Symbol Parameter Max. Units VDS Drain-to-Source Voltage 30 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 247 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 156 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 160 IDM Pulsed Drain Current 850 PD @TC = 25°C Maximum Power Dissipation 195 W Linear Derating Factor 1.6 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics Symbol Parameter Max. Units EAS (Thermally limited) Single Pulse Avalanche Energy 177 mJ IAR Avalanche Current A Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 0.64 °C/W RJA Junction-to-Ambient (PCB Mount) ––– 40 148 Application Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC inverters |
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