CSD13383F4_15 datasheet(3/15 Pages) TI

3 / 15 page

CSD13383F4

www.ti.com

SLPS517 – DECEMBER 2014

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, IDS = 250 μA

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = 9.6 V

µA

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = 10 V

µA

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, IDS = 250 μA

0.70

1.00

1.25

VGS = 2.5 V, IDS =0.5 A

Ω

RDS(on)

Drain-to-Source On-Resistance

VGS = 4.5 V, IDS =0.5 A

Ω

gƒs

Transconductance

VDS = 6 V, IDS = 0.5 A

5.4

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

224

291

VGS = 0 V, VDS = 6 V,

Coss

Output Capacitance

ƒ = 1 MHz

Crss

Reverse Transfer Capacitance

Series Gate Resistance

240

Ω

Gate Charge Total (4.5 V)

2.0

2.6

Qgd

Gate Charge Gate-to-Drain

0.6

VDS = 6 V, IDS = 0.5 A

Qgs

Gate Charge Gate-to-Source

0.4

Qg(th)

Gate Charge at Vth

0.1

Qoss

Output Charge

VDS = 6 V, VGS = 0 V

0.9

td(on)

Turn On Delay Time

Rise Time

123

VDS = 6 V, VGS = 4.5 V,

IDS = 0.5 A,RG = 2 Ω

td(off)

Turn Off Delay Time

tƒ

Fall Time

315

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = 0.5 A, VGS = 0 V

0.7

1.0

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

Junction-to-Ambient Thermal Resistance(1)

RθJA

°C/W

Junction-to-Ambient Thermal Resistance(2)

250

(1)

Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

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