MTPT150 datasheet(3/5 Pages) NELLSEMI

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TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

PGM

5 ms, TJ = TJ maximum

Maximum average gate power

PG(AV)

f = 50 Hz, TJ = TJ maximum

Maximum peak gate current

IGM

5 ms, TJ = TJ maximum

Maximum peak negative

gate voltage

- VGT

gate voltage

VGT

Anode supply = 12 V,

resistive load; Ra = 1

TJ = 25 °C

I GT

Maximum gate voltage

that will not trigger

VGD

TJ = TJ maximum, 67% VDRM applied

0.25

Maximum gate current

that will not trigger

IGD

Maximum rate of rise of

turned-on current

dI/dt

TJ = 25ºC ,I

= 1.5A ,t ≤ 0.5 µs

A/μs

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

junction operating and storage

temperature range

TJ, Tstg

- 40 to 125

°C

Maximum thermal resistance,

junction to case per junction

RthJC

DC operation

°C/W

Typical thermal resistance,

case to heatsink per module

RthCS

Mounting surface, smooth , flat and greased

Mounting

torque ± 10 %

to heatsink, M6

A mounting compound is recommended and the

torque should be rechecked after a period of

about 3 hours to allow for the

spread of the compound.

to terminal, M6/M4

Approximate weight

470

16.6

TRIGGERING

J = TJ

- VGT

Maximum required DC

to trigger

Maximum required DC

gate current to trigger

= T

°C

thCS

≤

100

oz.

0.09

0.21

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

Maximum peak reverse and

off-state leakage current

IRRM,

IDRM

TJ = 125 °C

RMS isolation Voltage

VISO

50 Hz, circuit to base,

all terminals shorted, 25 ºC ,60s

Critical rate of rise of

off-state voltage

dV/dt

TJ = TJ maximum,

exponential to 67 % rated VDRM

V/μs

500

3000

UNITS

5 / 2

N.m

200

SEMICONDUCTOR

RoHS

MTPT150

Nell High Power Products

Device code

150

MTPT

rating : "150" for 200 A

F(AV)

RRM

Voltage code : code x 100 = V

Module type : “MTPT” for 3Ø Br dge + Thyr stor

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