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2N5832 Datasheet(PDF) 1 Page - Micro Commercial Components |
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2N5832 Datasheet(HTML) 1 Page - Micro Commercial Components |
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1 / 1 page ![]() 2N5832 NPN Transistor TO-92 Features • Through Hole Package DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .175 .185 4.45 4.70 B .175 .185 4.46 4.70 C .500 --- 12.7 --- D .016 .020 0.41 0.63 E .135 .145 3.43 3.68 G .095 .105 2.42 2.67 Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage 140 (IC=300mAdc) Vdc V(BR)CBO Collector-Base Breakdown Voltage 160 Vdc V(BR)EBO Emitter-Base Breakdown Voltage 5.0 Vdc ICBO Collector-Base Breakdown Current (VCE=120Vdc) 50 nAdc ON CHARACTERISTICS hFE DC Current Gain* (IC=10mAdc, VCE=5.0Vdc) 175 500 VCE(sat) Collector-Emitter Saturation Voltage (IC=10mAdc) 0.2 Vdc SMALL-SIGNAL CHARACTERISTICS fT Current Gain-Bandwidth Product (IC=10mAdc) 100 MHz Cob Output Capacitance 4.0 pF NF Noise Figure ---- dB Pin Configuration Bottom View C B E A E B C D G www.mccsemi.com Plastic-case Bipolar Note: Maximum at typical JEDEC condition V(BR)CER @ R=10 OHMS omponents 21201 Itasca Street Chatsworth !"# $% !"# MCC |
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