BF1211_15 datasheet(2/15 Pages) JMNIC

2 / 15 page

2003 Dec 16

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate MOS-FETs

BF1211; BF1211R; BF1211WR

FEATURES

• Short channel transistor with high forward transfer

admittance to input capacitance ratio

• Low noise gain controlled amplifier

• Excellent low frequency noise performance

• Partly internal self-biasing circuit to ensure good

cross-modulation performance during AGC and good

DC stabilization.

APPLICATIONS

• Gain controlled low noise VHF and UHF amplifiers for

5 V digital and analog television tuner applications.

DESCRIPTION

Enhancement type N-channel field-effect transistor with

source and substrate interconnected. Integrated diodes

between gates and source protect against excessive input

voltage surges. The BF1211, BF1211R and BF1211WR

are encapsulated in the SOT143B, SOT143R and

SOT343R plastic packages respectively.

PINNING

DESCRIPTION

source

drain

gate 2

gate 1

handbook, 2 columns

Top view

MSB014

Fig.1

Simplified outline (SOT143B).

BF1211 marking code: LFp

handbook, 2 columns

Top view

MSB035

Fig.2

Simplified outline (SOT143R).

BF1211R marking code: LHp

handbook, halfpage

Top view

MSB842

Fig.3

Simplified outline (SOT343R).

BF1211WR marking code: MK

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS

drain-source voltage

−−

drain current

−−

Ptot

total power dissipation

−−

180

yfs

forward transfer admittance

Cig1-ss

input capacitance at gate 1

−

2.1

2.6

Crss

reverse transfer capacitance

f = 1 MHz

−

noise ﬁgure

f = 400 MHz

−

0.9

1.6

Xmod

cross-modulation

input level for k = 1% at

40 dB AGC

100

105

−

µV

junction temperature

−−

150

°C

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