BFG590_15 datasheet(2/12 Pages) JMNIC

2 / 12 page

1998 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistors

BFG590; BFG590/X

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

APPLICATIONS

• MATV/CATV amplifiers and RF communications

subscriber equipment in the GHz range

• Ideally suitable for use in class-A, (A)B and C amplifiers

with either pulsed or continuous drive.

DESCRIPTION

NPN silicon planar epitaxial transistor in a 4-pin

dual-emitter SOT143B plastic package.

MARKING

TYPE NUMBER

CODE

BFG590

N38

BFG590/X

N44

PINNING

DESCRIPTION

BFG590

BFG590/X

collector

base

emitter

base

emitter

Fig.1 Simplified outline SOT143B.

handbook, 2 columns

Top view

MSB014

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCEO

collector-emitter voltage

open base

−−

collector current (DC)

−−

200

Ptot

total power dissipation

Ts ≤ 60 °C

−−

400

hFE

DC current gain

IC = 35 mA; VCE = 8 V

5090280

Cre

feedback capacitance

IC = 0; VCE =8V; f=1MHz

−

0.7

−

transition frequency

IC = 80 mA; VCE =4V; f=1GHz

−

GHz

GUM

maximum unilateral power gain

IC = 80 mA; VCE =4V;

f = 900 MHz; Tamb =25 °C

−

|S21|2

insertion power gain

IC = 80 mA; VCE =4V;

f = 900 MHz; Tamb =25 °C

−

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